Duan Research Group

Hetero-integrated Nanostructures and Nanodevices

Research

Advanced Electronics and Photonics

For the past half-century or so, semiconductor electronics have experienced tremendous growth and revolutionized computing, communications, automation, and just about every aspect of our daily lives. To a large extent, these advances have been made possible by the continued miniaturization of silicon-based electronics, leading to denser, faster and more power-efficient circuitry. Although this scaling alone has provided the needed performance improvements from one generation of integrated circuits to the next, it is well recognized that the continued increase in device speed and computing power through the evolutionary advancements of silicon electronics will soon reach a fundamental technological limit. To sustain the continued advancement in electronic technologies and fuel the expected demands of our society into the future, transformative technologies that employ alternative materials and/or fundamentally different operation principles are necessary. Synthetic nanostructures can be produced with precisely controlled dimension with single atomic precision, and van der Waals integration can enable a flexible combination of highly disparate, normally incompatible materials to offer exciting opportunities for future electronics and photonics.

To this end, we are exploring a wide range of synthetic nanostructures, including nanodots, nanowires, and nanosheets for the creation of new proof-of-concept devices and circuits that can address the fundamental limits of traditional devices and open up completely new paradigms for future electronics, with unprecedented speed, flexibility and form factor.

  • High-Frequency Transistors. Utilizing high-mobility and single atomic thickness of graphene, along with a novel self-aligned fabrication process, we are creating record-setting performance for analog graphene transistors.
  • Vertical Field Effect Transistors. Stacked heterostructures of layered materials enable an innovative design of vertical transistors that can open up a new dimension for future electronic integration.
  • Photodetectors and Photovoltaics. Integration of graphene with plasmonic nanostructures or other layered materials can open up powerful new ways for the design of unconventional photoresponsive devices with extraordinary speed, sensitivity, efficiency and flexibility.
UCLA, Department of Chemistry and Biochemistry
607 Charles E. Young Drive East, Box 951569
Los Angeles, CA 90095-1569
E-mail: xduan@chem.ucla.edu