Highly Flexible Electronics from Scalable Vertical Thin Film Transistors
Y. Liu, H. Zhou, R. Cheng, W. Yu, Y. Huang and X. Duan
Nano Lett. 14, 1413–1418 (2014)
Flexible thin-film transistors (TFTs) are of central importance for diverse electronic and particularly macroelectronic applications. The current TFTs using organic or inorganic thin film semiconductors are usually limited by either poor electrical performance or insufficient mechanical flexibility. Here, we report a new design of highly flexible vertical TFTs (VTFTs) with superior electrical performance and mechanical robustness. By using the graphene as a work-function tunable contact for amorphous indium gallium zinc oxide (IGZO) thin film, the vertical current flow across the graphene–IGZO junction can be effectively modulated by an external gate potential to enable VTFTs with a highest on–off ratio exceeding 10^5. The unique vertical transistor architecture can readily enable ultrashort channel devices with very high delivering current and exceptional mechanical flexibility. With large area graphene and IGZO thin film available, our strategy is intrinsically scalable for large scale integration of VTFT arrays and logic circuits, opening up a new pathway to highly flexible macroelectronics.