Band-Selective Infrared Photodetectors with Complete-Composition-Range InAsxP1-x Alloy Nanowires
P. Ren, W. Hu, Q. Zhang, X. Zhu, X. Zhuang, L. Ma, X. Fan, H. Zhou, L. Liao, X. Duan and A. Pan
Adv. Mat. 26, 7444–7449 (2014)
Band-selective infrared photodetectors (PDs) are constructed with InAsxP1-x alloy nanowires from the complete composition range (0 ≤ x ≤ 1) achieved by a new growth route combining the vapor–liquid–solid mechanism with an additional ion-exchange process. Increasing the composition x value from 0 to 1 in the PDs allows the peak response wavelength to be gradually tuned from ca. 900 to ca. 2900 nm.