Duan Research Group

Hetero-integrated Nanostructures and Nanodevices


Single-layer graphene on Al2O3/Si substrate: better contrast and higher performance of graphene transistors

L. Liao, J. Bai, Y. Qu, Y. Huang and X. Duan

Nanotechnology 21, 015705 (2010)

The fact that single-layer graphene can be visualized on 300 nm SiO2/Si substrate using an optical microscope has enabled the facile fabrication of single-layer graphene devices for fundamental studies and potential applications. Here we report on an Al2O3/Si substrate for the fabrication of graphene devices with better contrast and higher performance. Our studies show that the contrast of single-layer graphene on 72 nm Al2O3/Si substrate is much better than that of single-layer graphene on 300 nm SiO2/Si substrate. Moreover, the transconductance of single-layer graphene transistors on Al2O3/Si substrate shows a more than sevenfold increase, due to the smaller dielectric thickness and higher dielectric constant in a 72 nm Al2O3 film. These studies demonstrate a new and superior substrate for the fabrication of graphene transistors, and are of significance for both fundamental studies and technological applications.
UCLA, Department of Chemistry and Biochemistry
607 Charles E. Young Drive East, Box 951569
Los Angeles, CA 90095-1569
E-mail: xduan@chem.ucla.edu