SnSe/MoS2 van der Waals Heterostructure Junction Field‐Effect Transistors with Nearly Ideal Subthreshold Slope
Jian Guo, Laiyuan Wang, Yiwei Yu, Peiqi Wang, Yu Huang, Xiangfeng Duan
Adv. Mater. 31, 1902962 (2019)
The minimization of the subthreshold swing (SS) in transistors is essential for low‐voltage operation and lower power consumption, both critical for mobile devices and internet of things (IoT) devices. The conventional metal‐oxide‐semiconductor field‐effect transistor requires sophisticated dielectric engineering to achieve nearly ideal SS (60 mV dec−1 at room temperature). However, another type of transistor, the junction field‐effect transistor (JFET) is free of dielectric layer and can reach the theoretical SS limit without complicated dielectric engineering. The construction of a 2D SnSe/MoS2 van der Waals (vdW) heterostructure‐based JFET with nearly ideal SS is reported. It is shown that the SnSe/MoS2 vdW heterostructure exhibits excellent p–n diode rectifying characteristics with low saturate current. Using the SnSe as the gate and MoS2 as the channel, the SnSe/MoS2 vdW heterostructure exhibit well‐behavioured n‐channel JFET characteristics with a small pinch‐off voltage VP of −0.25 V, nearly ideal subthreshold swing SS of 60.3 mV dec−1 and high ON/OFF ratio over 106, demonstrating excellent electronic performance especially in the subthreshold regime.