Publications
High-performance top-gated graphene-nanoribbon transistors using zirconium oxide nanowires as high-dielectric-constant gate dielectrics
L. Liao, J. Bai, Y. Li , Y. Qu, Y. Huang, and X. Duan
Adv. Mater. 22, 1941-1945 (2010)
A new strategy for integrating high-dielectric-constant (high-k) dielectrics with graphene nanoribbon (GNR) is presented. Freestanding zirconium oxide nanowires are synthesized and subsequently assembled on top of GNRs as high-k gate dielectrics for top-gated GNR transistors with unprecedented performance.
Authors:
UCLA, Department of Chemistry and Biochemistry
607 Charles E. Young Drive East, Box 951569
Los Angeles, CA 90095-1569
E-mail: xduan@chem.ucla.edu
607 Charles E. Young Drive East, Box 951569
Los Angeles, CA 90095-1569
E-mail: xduan@chem.ucla.edu
