Solvothermal reduction synthesis of InSb nanocrystals
Y. Li, Z.Wang, X. Duan, G. Zhang, and C. Wang
Adv. Mater. 13, 145-148 (2001)
Group III–V compound semiconductors are used widely in electronic and optoelectronic applications. Of this group of materials, indium antimonide is particularly well suited for use in high-speed devices as it has a small bandgap and the largest room-temperature carrier mobility. Here, a new method for the synthesis of InSb (and related GaSb) is presented that sidesteps many of the problems of current methods, for example, high temperatures, air stability, or general complexity.