Publications

Band-selective infrared photodetectors (PDs) are constructed with InAsxP1-x alloy nanowires from the complete composition range (0 ≤ x ≤ 1) achieved by a new growth route combining the vapor–liquid–solid mechanism with an additional ion-exchange process. Increasing the composition x value from 0 to 1 in the PDs allows the peak response wavelength to be gradually tuned from ca. 900 to ca. 2900 nm.