Duan Research Group

Hetero-integrated Nanostructures and Nanodevices

Publications

Few-layer ​molybdenum disulfide transistors and circuits for high-speed flexible electronics

R. Cheng, S. Jiang, Y. Chen, Y. Liu, N. O. Weiss, H.-C. Cheng, H. Wu, Y. Huang and X. Duan

Nature Commun. 5, 5413 (2014)

Abstract:

Two-dimensional layered materials, such as ​molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of ​MoS2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency fT up to 42 GHz and a maximum oscillation frequency fMAX up to 50 GHz, exceeding the reported values for ​MoS2 transistors to date (fT~0.9 GHz, fMAX~1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple ​MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics.
UCLA, Department of Chemistry and Biochemistry
607 Charles E. Young Drive East, Box 951569
Los Angeles, CA 90095-1569
E-mail: xduan@chem.ucla.edu